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A gate equivalent (GE) stands a unit of measure which allows to specify ''manufacturing-technology-independent complexity'' of digital electronic circuits. For today's CMOS technologies, the silicon area of a two-input drive-strength-one NAND gate usually constitutes the ''technology-dependent'' unit area commonly referred to as gate equivalent. A specification in gate equivalents for a certain circuit reflects a complexity measure, from which a corresponding silicon area can be deduced for a dedicated manufacturing technology. In digital circuit design, a dedicated ''standard cell library'' is employed for each manufacturing technology (e.g., CMOS). The standard cell library comprises many different logic gates, for example a NAND gate. For each logical type of logic gate, e.g., a two-input NAND, there usually exist different physical realizations in the standard cell library, for instance with different output drive strengths. Basically, a two-input drive-strength-one NAND gate in CMOS technology consists of four transistors. If higher output drive strength is required, an additional output driver stage of four transistors is added. == References == * ''(Digital Integrated Circuit Design: From VLSI Architectures to CMOS Fabrication )'', Hubert Kaeslin, Cambridge University Press, 2008 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Gate equivalent」の詳細全文を読む スポンサード リンク
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